| PART |
Description |
Maker |
| TE28F320S3-100 TE28F320S3-120 TE28F160S3-100 TE28F |
WORD-WIDE FlashFile MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| MS28F016SA VS28F016SA |
16-Mbit (2 Mbit x 8) FlashFile Memory(16-M2 Mx 8) FlashFile 存储
16-Mbit (1 Mbit x 16) FlashFile Memory(16-M1 Mx 16) FlashFile 存储 16兆位兆位× 16FlashFile内存6米位米位× 16FlashFile存储器）
|
Intel Corp.
Intel, Corp.
|
| TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F0 |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
INTEL[Intel Corporation]
|
| 28F008S3 28F004S3 28F016S3 29059805 |
3 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| M5M29KE131BVP |
Memory>NOR type Flash Memory
134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
| HM514260AJ-10 HM514260AJ-8 HM514260ALJ-7 HM514260A |
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
262, 144-Word x 16-Bit Dynamic Random Access Memory
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
HITACHI[Hitachi Semiconductor]
ITT, Corp.
|
| MSM518222 MSM518222-25JS MSM518222-30JS MSM518222- |
From old datasheet system
262214-Word x 8-Bit Field Memory
262,214-Word x 8-Bit Field Memory
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| 28F008SA-L 29043505 |
8-Mbit (1-Mbit x 8) FlashFile Memory
From old datasheet system
|
Intel
|
| TC54256 TC54256AF TC54256AP |
32,768 WORD x 8 BIT CMOS ONE TIME PROGRAMMABLE READ ONLY MEMORY
32768 word x 8-bit CMOC one time programmable read only memory, 200ns
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HM514400B HM514400BL HM514400C HM514400CL HM514400 |
1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns
|
Hitachi Semiconductor
|
